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TC7662BCOA データシートの表示(PDF) - TelCom Semiconductor Inc => Microchip

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TC7662BCOA
TelCom-Semiconductor
TelCom Semiconductor Inc => Microchip TelCom-Semiconductor
TC7662BCOA Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
CHARGE PUMP DC-TO-DC
VOLTAGE CONVERTER
TC7662B
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ...................................................... +16.5V
LV, Boost and OSC Inputs Voltage (Note 1)
V+<5.5V ..................................... – 0.3V to (V+ + 0.3V)
>5.5V .................................. (V+ – 5.5V) to (V+ + 0.3V)
Current Into LV (Note 1)
V+ >3.5V ............................................................. 20µA
Output Short Duration
(VSUPPLY 5.5V) ....................................... Continuous
Power Dissipation (TA 70°C) (Note 2)
Plastic DIP ......................................................730mW
SO ..................................................................470mW
Operating Temperature Range
C Suffix .................................................. 0°C to +70°C
E Suffix ............................................. – 40°C to +85°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
ELECTRICAL CHARACTERISTICS: V+ = 5V, TA = +25°C, OSC = Free running, Test Circuit Figure 2, Unless
Otherwise Specified.
Symbol Parameter
Test Conditions
Min Typ Max Unit
I+
Supply Current (Note 3)
RL = , +25°C
80
160
µA
(Boost pin OPEN OR GND)
0°C TA +70°C
180
µA
– 40°C TA +85°C
180
µA
– 55°C TA +125°C
200
µA
I+
Supply Current
0°C TA +70°C
300
µA
(Boost pin = V+)
– 40°C TA +85°C
350
– 55°C TA +125°C
400
VH+
Supply Voltage Range, High
RL = 10 k, LV Open, TMIN TA TMAX
3.0
15
V
(Note 4)
VL+
Supply Voltage Range, Low
RL = 10 k, LV to GND, TMIN TA TMAX
1.5
3.5
V
ROUT
fOSC
PEff
VOUTEff
ZOSC
Output Source Resistance
Oscillator Frequency
Power Efficiency
Voltage Conversion Efficiency
Oscillator Impedance
IOUT = 20 mA, 0°C TA +70°C
IOUT = 20 mA, – 40°C TA +85°C
IOUT = 20 mA, - 55°C TA +125°C
IOUT = 3 mA, V+ = 2V, LV to GND ,
0°C TA +70°C
IOUT = 3 mA, V+ = 2V, LV to GND ,
– 40°C TA +85°C
IOUT = 3 mA, V+ = 2V, LV to GND ,
– 55°C TA +125°C
COSC = 0, Pin 1 Open or GND
Pin 1 = V+
RL = 5 k
TMIN TA TMAX
RL =
V+ = 2V
V+ = 5V
65
100
120
150
250
300
400
5
10
kHz
35
96
96
%
95
97
99 99.9 —
%
1
M
100
k
NOTES:
1. Connecting any terminal to voltages greater than V+ or less than GND may cause destructive latch-up. It is recommended that no inputs from
sources operating from external supplies be applied prior to “power up” of the TC7662B.
2. Derate linearly above 50°C by 5.5 mW/°C.
3. In the test circuit, there is no external capacitor applied to pin 7. However, when the device is plugged into a test socket, there is usually a very
small but finite stray capacitance present, of the order of 5pF.
4. The TC7662B can operate without an external diode over the full temperature and voltage range. This device will function in existing designs which
incorporate an external diode with no degradation in overall circuit performance.
4-84
TELCOM SEMICONDUCTOR, INC.

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