2N6988 データシートの表示（PDF） - Semicoa Semiconductor
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2N6988 Datasheet PDF : 2 Pages
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2N6988
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA
60
Volts
Collector-Base Cutoff Current
Collector-Base Cutoff Current
ICBO1
ICBO2
ICBO3
VCB = 60 Volts
VCB = 50 Volts
VCB = 50 Volts, TA = 150°C
10
µA
10
nA
10
µA
Emitter-Base Cutoff Current
IEBO1
IEBO2
VEB = 5 Volts
VEB = 4 Volts
10
µA
50
nA
On Characteristics
Parameter
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Transistor to Transistor Resistance
Switching Characteristics
Saturated Turn-On Time
Saturated Turn-Off Time
Pulse Test: Pulse Width = 300 µs, Duty Cycle <2.0%
Symbol
Test Conditions
Min
Typ
Max Units
hFE1 IC = 0.1 mA, VCE = 10 Volts
75
hFE2 IC = 1.0 mA, VCE = 10 Volts
100
hFE3 IC = 10 mA, VCE = 10 Volts
100
hFE4 IC = 150 mA, VCE = 10 Volts
100
hFE5 IC = 500 mA, VCE = 10 Volts
50
hFE6 IC = 1.0 mA, VCE = 10 Volts
50
TA = -55°C
VBEsat1 IC = 150 mA, IB = 15 mA
VBEsat2 IC = 500 mA, IB = 50 mA
VCEsat1 IC = 150 mA, IB = 15 mA
VCEsat2 IC = 500 mA, IB = 50 mA
450
300
1.3
2.6
Volts
0.4
1.6
Volts
Symbol
Test Conditions
Min
Typ
Max Units
|hFE|
VCE = 20 Volts, IC = 20 mA,
f = 100 MHz
2
hFE
VCE = 10 Volts, IC = 1 mA,
f = 1 kHz
100
COBO
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
CIBO
VEB = 2 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
|RT-T| |VT-T| = 500 Volts
1010
8
pF
30
pF
Ω
tON
45
ns
tOFF
300
ns
Copyright© 2003
Rev. D.2
Semicoa
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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