TC7660HEPA データシートの表示（PDF） - TelCom Semiconductor Inc => Microchip

部品番号

コンポーネント説明

メーカー

TC7660HEPA

HIGH FREQUENCY 7660 DC-TO-DC VOLTAGE CONVERTER

TelCom Semiconductor Inc => Microchip 

HIGH FREQUENCY 7660 DC-TO-DC

VOLTAGE CONVERTER

TC7660H

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ...................................................... +10.5V

LV and OSC Inputs

Voltage (Note 1) ........................ – 0.3V to (V+ + 0.3V)

for V+ < 5.5V

(V+ – 5.5V) to (V+ + 0.3V)

for V+ > 5.5V

Current Into LV (Note 1) ...................... 20µA for V+ > 3.5V

Output Short Duration (VSUPPLY ≤ 5.5V) ......... Continuous

Power Dissipation (TA ≤ 70°C) (Note 2)

SOIC ............................................................... 470mW

Plastic DIP ......................................................730mW

Operating Temperature Range

C Suffix .................................................. 0°C to +70°C

E Suffix ............................................. – 40°C to +85°C

Storage Temperature Range ................ – 65°C to +150°C

Lead Temperature (Soldering, 10 sec) ................. +300°C

*Static-sensitive device. Unused devices must be stored in conductive

material. Protect devices from static discharge and static fields. Stresses

above those listed under "Absolute Maximum Ratings" may cause perma-

nent damage to the device. These are stress ratings only and functional

operation of the device at these or any other conditions above those

indicated in the operation sections of the specifications is not implied.

Exposure to absolute maximum rating conditions for extended periods

may affect device reliability.

ELECTRICAL CHARACTERISTICS: Over Operating Temperature Range with V+= 5V, CI = C2 = 1µF,COSC = 0,

Test Circuit (Figure 1), unless otherwise indicated.

Symbol Parameter

Test Conditions

Min Typ Max Unit

I+

VH+

VL+

ROUT

Supply Current

Supply Voltage Range, High

Supply Voltage Range, Low

Output Source Resistance

RL = ∞

Min ≤ TA ≤ Max,

RL = 5kΩ, LV Open

Min ≤ TA ≤ Max,

RL = 5kΩ, LV to GND

IOUT = 20mA, TA = 25°C

IOUT = 20mA, 0°C ≤ TA ≤ +70°C

(C Device)

—

0.46 1.0 mA

3

—

10

V

1.5

—

3.5

V

—

55

80

Ω

—

—

95

Ω

IOUT = 20mA, – 40°C ≤ TA ≤ +85°C

(E Device)

—

—

110

Ω

V+ = 2V, IOUT = 3mA, LV to GND

0°C ≤ TA ≤ +70°C

—

150 250

Ω

FOSC

Oscillator Frequency

—

120

—

kHz

PEFF

Power Efficiency

IOUT = 10mA, Min ≤ TA ≤ Max

81

85

—

%

VEFF

Voltage Efficiency

RL = ∞

99

99.7 —

%

NOTES: 1. Connecting any input terminal to voltages greater than V+ or less than GND may cause destructive latch-up. It is recommended that no

inputs from sources operating from external supplies be applied prior to "power up" of the TC7660H.

2. Derate linearly above 50°C by 5.5 mW/°C.

4-64

TELCOM SEMICONDUCTOR, INC.

Share Link: