TC911B データシートの表示（PDF） - Microchip Technology

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TC911B

Monolithic Auto-Zeroed Operational Amplifiers

Microchip Technology 

TC911A/TC911B

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings*

Total Supply Voltage (VDD to VSS) ........................-18V

Input Voltage .................... VDD + 0.3V) to (VSS – 0.3V)

Current Into Any Pin............................................ 10mA

While Operating ...................................... 100μA

Package Power Dissipation (TA - 70°C)

Plastic DIP............................................. 730mW

Plastic SOIC .......................................... 470mW

Operating Temperature Range

C Device....................................... 0°C to +70°C

Storage Temperature Range.............. -65°C to +150°C

*Stresses above those listed under "Absolute Maxi-

mum Ratings" may cause permanent damage to the

device. These are stress ratings only and functional

operation of the device at these or any other conditions

above those indicated in the operation sections of the

specifications is not implied. Exposure to Absolute

Maximum Rating conditions for extended periods may

affect device reliability.

TC911A AND TC911B ELECTRICAL SPECIFICATIONS

Electrical Characteristics: VS = ±5V, TA = +25°C, unless otherwise indicated.

TC911A

TC911B

Symbol Parameter

Min

Typ

VOS

TCVOS

IB

IOS

eN

CMRR

CMVR

AOL

VOUT

BW

SR

PSRR

VS

IS

Note

Input Offset

—

5

Voltage

Average Temp.

—

0.05

Coefficient of

—

0.05

Input Offset

Voltage

Average Input

—

—

Bias Current

—

—

—

—

Average Input

—

5

Offset Current

—

—

Input Voltage

—

0.65

Noise

—

11

Common Mode

110

116

Rejection Ratio

Common Mode

VSS

—

Voltage Range

Open-Loop

115

120

Voltage Gain

Output Voltage VSS + 0.3 —

Swing

Closed Loop

—

1.5

Bandwidth

Slew Rate

—

2.5

Power Supply

112

—

Rejection Ratio

Operating

±3.3

—

Supply Voltage

6.5

—

Range

Quiescent

—

350

Supply Current

1: Characterized; not 100% tested.

Max

Min

15

—

0.15

—

0.15

—

70

—

3

—

4

—

20

—

1

—

—

—

—

—

—

105

VDD – 2

VSS

—

110

VDD – 0.9 VSS + 0.3

—

—

—

—

—

105

±8

±3.3

16

6.5

600

—

Typ

Max

Unit

Test Conditions

15

30

μV TA = +25°C

0.1

0.25 μV/°C 0°C ≤ TA ≤ +70°C

0.1

0.25 μV/°C -25°C ≤ TA ≤ +85°C

(Note 1)

—

—

—

10

—

0.65

11

110

—

120

—

1.5

120

pA TA = +25°C

4

nA 0°C ≤ TA ≤ +70°C

6

nA -25°C ≤ TA ≤ +85°

40

pA TA = +25°C

1

nA TA = +85°C

—

μVP-P 0.1 to 1Hz, RS ≤ 100Ω

—

μVP-P 0.1 to 10Hz, RS ≤ 100Ω

—

dB VSS ≤ VCM ≤ VDD - 2.2

VDD – 2

V

—

dB RL = 10kΩ, VOUT = ±4V

VDD – 0.9 V RL = 10kΩ

—

MHz Closed Loop Gain = +1

2.5

—

V/μsec RL = 10kΩ, CL = 50pF

—

—

dB ±3.3V to ±5.5V

—

±8

V Split Supply

—

16

V Single Supply

—

800

μA VS = ±5V

© 2005 Microchip Technology Inc.

DS21481C-page 3

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