TD350 データシートの表示（PDF） - STMicroelectronics

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TD350

Advanced IGBT/MOSFET driver

STMicroelectronics 

Electrical characteristics

4

Electrical characteristics

TD350

TA = -20 to 125 °C, VH=16 V, VL=-10 V (unless otherwise specified)

Table 5.

Symbol

Electrical characteristics

Parameter

Test condition

Min

Input

Vton IN turn-on threshold voltage

Vtoff IN turn-off threshold voltage

tonmin Minimum pulse width

Iinp IN input current

Voltage reference (1)

Vref Voltage reference

Iref Maximum output current

Desaturation protection

T=25°C

Tmin<T<Tmax

Vdes

Ides

Desaturation threshold

Source current

Fault output

tfault

VFL

Clamp

Delay for fault detection

FAULT low voltage

IFLsink=10mA

Vtclamp CLAMP pin voltage threshold

VCL Clamp low voltage

Off delay

T=25°C; ICLsink=500mA

Tmin<T<Tmax; ICLsink=500mA

Vtdel

Rdel

Voltage threshold

Discharge resistor

Off levels

I=1mA

Iblvoff

Violv

LVOFF peak input current (sink)

Offset voltage

Outputs

LVOFF=12V

LVOFF=12V

VOL1

VOL2

Output low voltage at Iosink=20mA

Output low voltage at Iosink=200mA

T=25°C

Tmin<T<Tmax

0.8

100

4.85

4.77

10

6.5

2.35

-0.3

Typ

Max Unit

1.0

V

4.0

4.2

V

135

220 ns

1

μA

5.00 5.15 V

5.22 V

mA

7.2

7.9

V

250

μA

500 ns

1

V

2.0

V

VL+2.5 V

VL+3.0 V

2.50 2.65 V

500 Ω

120

200 μA

-0.15

0

V

VL+0.35 V

VL+1.0 V

VL+1.5 V

6/17

Doc ID 9525 Rev 6

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