TD350ETR データシートの表示（PDF） - STMicroelectronics

部品番号

コンポーネント説明

メーカー

TD350ETR

Advanced IGBT/MOSFET driver

STMicroelectronics 

TD350E

Advanced IGBT/MOSFET driver

Features

■ 1.5 A source/2.3 A sink (typ) gate drive

■ Active Miller clamp feature

■ Two-level turn-off with adjustable level and

delay

■ Desaturation detection

■ Fault status output

■ Negative gate drive capability

■ Input compatible with pulse transformer or

optocoupler

■ Separate sink and source outputs for easy gate

driving

■ UVLO protection

■ 2 kV ESD protection (HBM)

Applications

■ 1200 V, 3-phase inverters

■ Motor control

■ UPS systems

Table 1. Device summary

Order codes

Temperature range

TD350E

TD350ETR

-40, +125 °C

Description

This device is an advanced gate driver for IGBTs

and power MOSFETs. Control and protection

functions are included and allow the design of

high reliability systems.

The innovative active Miller clamp function

eliminates the need for negative gate drive in

most applications and allows the use of a simple

bootstrap supply for the high side driver.

The device includes a two-level turn-off feature

with adjustable level and delay. This function

protects against excessive overvoltage at turn-off

in case of overcurrent or short-circuit conditions.

The same delay set in the two-level turn-off

feature is applied at turn-on to prevent pulse width

distortion.

The device also includes IGBT desaturation

protection and a FAULT status output, and is

compatible with both pulse transformer and

optocoupler signals.

Package

SO-14

Packaging

Tube

Tape and reel

September 2011

Doc ID 018539 Rev 2

1/17

www.st.com

17

Share Link: