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TDA8933B データシートの表示(PDF) - NXP Semiconductors.

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TDA8933B
NXP
NXP Semiconductors. NXP
TDA8933B Datasheet PDF : 42 Pages
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NXP Semiconductors
TDA8933B
Class D audio amplifier
Table 12. SE characteristics
VP = 25 V, RL = 2 × 8 , fi = 1 kHz, fosc = 320 kHz, RS < 0.1 [1] and Tamb = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Po(RMS)
RMS output power
continuous time output power per channel[2]
RL = 4 ; VP = 17 V
THD+N = 0.5 %, fi = 1 kHz
5.9
6.8
-
THD+N = 0.5 %, fi = 100 Hz
-
6.8
-
THD+N = 10 %, fi = 1 kHz
7.5
8.5
-
THD+N = 10 %, fi = 100 Hz
RL = 8 ; VP = 25 V
-
8.5
-
THD+N = 0.5 %, fi = 1 kHz
7.3
8.2
-
THD+N = 0.5 %, fi = 100 Hz
-
8.2
-
THD+N = 10 %, fi = 1 kHz
9.3
10.3
-
THD+N
total harmonic
distortion-plus-noise
THD+N = 10 %, fi = 100 Hz
-
Po = 1 W
[3]
fi = 1 kHz
-
10.3
-
0.014 0.1
fi = 6 kHz
-
0.05
0.1
Gv(cl)
|GV|
αcs
SVRR
closed-loop voltage gain
voltage gain difference
channel separation
supply voltage ripple
rejection
Vi =100 mV; no load
Po = 1 W; fi = 1 kHz
Operating mode
fi = 100 Hz
29
-
70
[4]
-
30
31
0.5
1
80
-
60
-
fi = 1 kHz
40
50
-
|Zi|
Vn(o)
input impedance
output noise voltage
differential
Operating mode; Ri = 0
Mute mode
70
[5] -
[5] -
100
-
100
150
70
100
VO(mute)
CMRR
mute output voltage
common mode rejection
ratio
Mute mode; Vi = 1 V (RMS)
Vi(cm) = 1 V (RMS)
-
100
-
-
75
-
ηpo
output power efficiency
VP = 17 V; RL = 4 ;
Po = 8 W/channel
VP = 25 V; RL = 8 ;
Po = 10 W/channel
86
89
-
89
92
-
[1] RS is the total series resistance of an inductor and a ESR single ended capacitor in the application.
[2] Output power is measured indirectly; based on RDSon measurement.
[3] THD+N is measured in a bandwidth of 20 Hz to 20 kHz, AES17 brick wall.
[4] Vripple = 2 V (p-p); Ri = 0 .
[5] B = 20 Hz to 20 kHz, AES17 brick wall.
Unit
W
W
W
W
W
W
W
W
%
%
dB
dB
dB
dB
dB
k
µV
µV
µV
dB
%
%
TDA8933B_1
Preliminary data sheet
Rev. 01 — 23 October 2008
© NXP B.V. 2008. All rights reserved.
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