TGA2533 データシートの表示（PDF） - TriQuint Semiconductor
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TGA2533 Datasheet PDF : 11 Pages
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TGA2533
Ku-Band Power Amplifier
Specifications
Absolute Maximum Ratings
Parameter
Drain Voltage,Vd
Gate Voltage,Vg
Drain Current, Id
Gate Current, Ig
Power Dissipation, Pdiss
RF Input Power, CW, 50Ω,T = 25ºC
Channel Temperature, Tch
Mounting Temperature (30 Seconds)
Storage Temperature
Rating
+8 V
-3 to 0 V
2.24 A
-11 to 90 mA
17.9 W
27 dBm
200 oC
260 oC
-40 to 150 oC
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress
ratings only, and functional operation of the device at these
conditions is not implied.
Recommended Operating Conditions
Parameter Min
Vd
Id
Id_drive (Under RF
Drive)
Vg
Typical
6
1.3
1.7
-0.55
Max Units
V
A
A
V
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: 25ºC, Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical.
Parameter
Min
Typical
Operational Frequency Range
12.7
Gain
24
28
Input Return Loss
10
15
Output Return Loss
10
15
Output Power @ Saturation
35
Output Power @ 1 dB Gain Compression
32
34
Output TOI @ Pout/Tone = 20 dBm
40
43
Gain Temperature Coefficient
-0.033
Power Temperature Coefficient
-0.005
Max
15.4
Units
GHz
dB
dB
dB
dBm
dBm
dBm
dB/°C
dBm/°C
Data Sheet: Rev A 05/19/11
© 2010 TriQuint Semiconductor, Inc.
- 2 of 11 -
Disclaimer: Subject to change without notice
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