TGA2533 データシートの表示（PDF） - TriQuint Semiconductor

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TGA2533

Ku-Band Power Amplifier

TriQuint Semiconductor 

TGA2533

Ku-Band Power Amplifier

Bond Pad Description

161514

13 12

11 10 9

8

1

23 4

56

7

Bond Pad

1

2,16

3,15

4,14

5,13

6,12

7,11

8

9

10

Symbol

RF IN

Vg1

Vg2

Vg3

Vd1

Vd2

Vd3

RF OUT

Vdet

Vref

GND

Description

Input, matched to 50 ohms.

Gate voltage for 1st stage. See Note 1.

Gate voltage for 2nd stage. See Note 1.

Gate voltage for 3rd stage. See Note 1.

Drain voltage for 1st stage. See Note 2.

Drain voltage for 2nd stage. See Note 2.

Drain voltage for 3rd stage. See Note 2.

Output, matched to 50 ohms

Detector diode output voltage. Varies with RF output power.

Reference diode output voltage.

Backside of die.

Notes:

1.

2.

ESD protection included; Bias network is required; can be biased from either side (pins 2,3,4 or pins 14,15,16), and non-biased

side can be left opened; see Application Circuit on page 6 as an example.

Bias network is required; must be biased from both sides; see Application Circuit on page 6 as an example.

Data Sheet: Rev A 05/19/11

© 2010 TriQuint Semiconductor, Inc.

- 7 of 11 -

Disclaimer: Subject to change without notice

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