TGA4517 データシートの表示（PDF） - TriQuint Semiconductor

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TGA4517

Ka-Band Power Amplifier

TriQuint Semiconductor 

TGA4517

TABLE IV

THERMAL INFORMATION

PARAMETER

θJC Thermal Resistance

(channel to backside of carrier)

TEST

CONDITIONS

Vd = 6 V

Idq = 2 A

Pdiss = 12 W

TCH

(°C)

122.3

θJC

(°C/W)

Tm

(HRS)

4.36

1.2E+7

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at

70oC baseplate temperature. Worst case condition with no RF applied, 100% of DC power is

dissipated.

Median Lifetime (Tm) vs. Channel Temperature

4

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