TIC108D データシートの表示（PDF） - Power Innovations Ltd
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TIC108D Datasheet PDF : 8 Pages
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TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
IDRM
IRRM
IGT
VGT
IH
VTM
dv/dt
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
Gate trigger voltage
Holding current
Peak on-state
voltage
Critical rate of rise of
off-state voltage
VD = rated VDRM
VR = rated VRRM
VAA = 6 V
VAA = 6 V
tp(g) ≥ 20 µs
VAA = 6 V
tp(g) ≥ 20 µs
VAA = 6 V
tp(g) ≥ 20 µs
VAA = 6 V
Initiating IT = 20 mA
VAA = 6 V
Initiating IT = 20 mA
ITM = 5 A
VD = rated VD
RGK = 1 kΩ
IG = 0
RL = 100 Ω
RL = 100 Ω
RGK = 1 kΩ
RL = 100 Ω
RGK = 1 kΩ
RL = 100 Ω
RGK = 1 kΩ
RGK = 1 kΩ
RGK = 1 kΩ
(see Note 6)
RGK = 1 kΩ
TC = 110°C
TC = 110°C
tp(g) ≥ 20 µs
TC = - 40°C
TC = 110°C
TC = - 40°C
TC = 110°C
400
µA
1
mA
0.2
1
mA
1.2
0.4 0.6
1
V
0.2
15
mA
10
1.7
V
80
V/µs
NOTE 6: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
3.5 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
Gate-controlled
tgt
turn-on time
Circuit-commutated
tq
turn-off time
IT = 5 A
IT = 5 A
TEST CONDITIONS
IG = 10 mA
See Figure 1
IRM = 8 A
See Figure 2
MIN TYP MAX UNIT
2.9
µs
13.3
µs
PRODUCT INFORMATION
2
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