TIC108D データシートの表示（PDF） - Power Innovations Ltd
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TIC108D Datasheet PDF : 8 Pages
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TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
PARAMETER MEASUREMENT INFORMATION
30 V
6Ω
IT
RG
G
VG
IG
VA
DUT
VG
10%
tgt
VA
90%
Figure 1. Gate-controlled turn-on time
PMC1AA
G1
VG1
30 V
0.1 µF
6Ω
to 0.5 µF
IA
RG
IG
0.1 Ω
VA
DUT
VK
(IRM Monitor)
R2
R1
TH1
RG
IG
VG2
NOTES: A. Resistor R1 is adjusted for the specified value
of IRM.
B. Resistor R2 value is 30/IH, where IH is the
holding current value of thyristor TH1.
C. Thyristor TH1 is the same device type as the
DUT.
D. Pulse Generators, G1 and G2, are
synchronised to produce an on-state anode
current waveform with the following
characteristics:
G2
tP = 50 µs to 300 µs
duty cycle = 1%
E. Pulse Generators, G1 and G2, have output
pulse amplitude, VG, of ≥ 20 V and duration of
10 µs to 20 µs.
G2 tP Synchronisation
VG1
VG2
IA
VA
IT
tP
0
IRM
VT
0
tq
Figure 2. Circuit-commutated turn-off time
PMC1AB
PRODUCT INFORMATION
3
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