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TIM1011-5L データシートの表示(PDF) - Toshiba
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コンポーネント説明
メーカー
TIM1011-5L
MICROWAVE POWER GaAs FET
Toshiba
TIM1011-5L Datasheet PDF : 5 Pages
1
2
3
4
5
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
°
C )
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25
°
C)
Channel Temperature
Storage
SYMBOL
V
DS
V
GS
I
DS
P
T
T
ch
T
stg
RATING
15
-5
5.7
30
175
-65
∼
+175
TIM1011-5L
UNIT
V
V
A
W
°
C
°
C
PACKAGE OUTLINE (2-9D1B)
4-R2.4
c
d
d
e
0.5
±
0.15
13.0
±
0.3
17.0 MAX.
8.5 MAX.
Unit : mm
c
Gate
d
Source
e
Drain
HANDLING PRECAUTIONS FOR PACKAGED TYPE
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260
°
C.
2
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