TIP31CO データシートの表示（PDF） - STMicroelectronics

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TIP31CO

Power transistors

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

TIP31C

Note:

(Tcase = 25°C unless otherwise specified)

Table 2. Electrical characteristics

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ICEO

Collector cut-off current

(IB = 0)

VCE = 60V

IEBO Emitter cut-off current (IC = 0) VEB = 5V

ICES

Collector cut-off current

(VBE = 0)

VCE = 100V

VCEO(sus)(1)

Collector-emitter

sustaining voltage (IB = 0)

IC = 30mA

100

VCE(sat)(1)

Collector-emitter saturation

voltage

IC = 3A_

IB = 375mA

0.3 mA

1 mA

0.2 mA

V

1.2 V

VBE(on)(1) Base-emitter voltage

hFE(1) DC current gain

IC = 3A_____ VCE = 4V

IC = 1A_ ___ VCE = 4V 25

IC = 3A _____ VCE = 4V

Group R

10

Group O

20

Group Y

40

1.8 V

24

44

50

1. Pulsed duration = 300 ms, duty cycle ≥ 1.5%

Product is pre-selected in DC current gain (Group R, Group O and Group Y).

STMicroelectronics reserves the right to ship each groups according to production

availability. Please contact your nearest STMicroelectronics sales office for delivery details.

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