TIP47(2002) データシートの表示（PDF） - ON Semiconductor
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TIP47 Datasheet PDF : 8 Pages
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TIP47 TIP48 TIP50
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.05
0.02
0.03
0.02
0.01
SINGLE PULSE
0.01
0.01 0.02
0.05 1.0 0.2
ZθJC(t) = r(t) RθJC
RθJC = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.5 1.0 2.0
5.0 10
20
t, TIME (ms)
50 100 200
500 1.0 k
Figure 4. Thermal Response
5.0
TC ≤ 25°C
2.0
1.0
1.0Ăms
0.5
dc
0.2
SECONDARY BREAKDOWN LIMITED
0.1
THERMALLY LIMITED @ 25°C
0.05
BONDING WIRE LIMITED
TIP47
0.02
CURVES APPLY
BELOW RATED VCEO
TIP48
TIP50
100õs
500õs
5.0
10
20
50
100
200
500
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
ts
TJ = 25°C
VCC = 200 V
IC/IB = 5.0
tf
0.05 0.1
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Turn–Off Time
+ā4.5
+ā3.5
*APPLIES FOR IC/IB ≤ hFE/5
+ā2.5
+ā1.5
+ā0.5
0
-ā0.5
-ā1.5
-ā2.5
0.02
θVC FOR VCE(sat)
θVB FOR VBE
+ā25°C to +ā150°C
-ā55°C to +ā25°C
+ā25°C to +ā150°C
-ā55°C to +ā25°C
0.05
0.1
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Temperature Coefficients
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