TIP514 データシートの表示（PDF） - Inchange Semiconductor

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TIP514

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

TIP514

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2.5A; IB=B -0.25A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB=B -0.5A

VBE(on) Base-Emitter On Voltage

IC= -5A; VCE= -4V

ICEO

Collector Cutoff Current

ICES

Collector Cutoff Current

IEBO

Emitter Cutoff Current

hFE-1

DC Current Gain

VCE= -75V; IB=B 0

VCE= -150V; VBE= 0

VCE= -75V; VBE= 0, TC=150℃

VEB= -2.5V; IC= 0

VEB= -5V; IC= 0

IC= -2.5A; VCE= -4V

hFE-2

DC Current Gain

IC= -5A; VCE= -4V

MIN MAX UNIT

-150

V

-1.0

V

-2.0

V

-2.2

V

-0.3

mA

-1.0

-2.0

mA

-0.1

-1.0

mA

30

150

15

isc Website：www.iscsemi.cn

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