DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

TISP4350M3LMFRS データシートの表示(PDF) - Bourns, Inc

部品番号
コンポーネント説明
メーカー
TISP4350M3LMFRS Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TISP4xxxM3LM Overvoltage Protector Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
IDRM
Parameter
Repetitive peak off-
state current
VD = ±VDRM
Test Conditions
V(BO) Breakover voltage
dv/dt = ±750 V/ms, RSOURCE = 300
Impulse breakover
V(BO) voltage
dv/dt ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
I(BO)
VT
IH
dv/dt
ID
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt = ±750 V/ms, RSOURCE = 300
IT = ±5 A, tW = 100 µs
IT = ±5 A, di/dt = - /+ 30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85VDRM
VD = ±50 V
Min Typ Max Unit
TA = 25 °C
TA = 85 °C
‘4070
‘4080
‘4095
±5
±10
µA
±70
±80
±95
‘4115
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
±115
±125
±145
±165
±180
V
±220
±240
‘4250
‘4260
‘4290
±250
±260
±290
‘4300
‘4350
±300
±350
‘4395
±395
‘4400
±400
‘4070
‘4080
‘4095
±78
±88
±102
‘4115
‘4125
‘4145
±122
±132
±151
‘4165
‘4180
‘4220
‘4240
±171
±186
V
±227
±247
‘4250
‘4260
‘4290
±257
±267
±298
‘4300
‘4350
‘4395
‘4400
±308
±359
±405
±410
±0.15
±0.6
A
±3
V
±0.15
±0.6
A
±5
kV/µs
TA = 85 °C
±10
µA
NOVEMBER 1997 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]