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TJA1050T/N1,112 データシートの表示(PDF) - NXP Semiconductors.

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TJA1050T/N1,112
NXP
NXP Semiconductors. NXP
TJA1050T/N1,112 Datasheet PDF : 18 Pages
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Philips Semiconductors
High speed CAN transceiver
Product specification
TJA1050
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages are referenced to GND (pin 2).
Positive currents flow into the IC.
SYMBOL
VCC
VCANH
VCANL
VTXD
VRXD
Vref
VS
Vtrt(CANH)
Vtrt(CANL)
Vesd
Tstg
Tvj
PARAMETER
CONDITIONS
supply voltage
DC voltage at pin CANH
0 < VCC < 5.25 V;
no time limit
DC voltage at pin CANL
0 < VCC < 5.25 V;
no time limit
DC voltage at pin TXD
DC voltage at pin RXD
DC voltage at pin Vref
DC voltage at pin S
transient voltage at pin CANH
note 1
transient voltage at pin CANL
note 1
electrostatic discharge voltage at all pins note 2
note 3
storage temperature
virtual junction temperature
note 4
MIN.
0.3
27
MAX.
+6
+40
UNIT
V
V
27
+40
V
0.3
0.3
0.3
0.3
200
200
4 000
200
55
40
VCC + 0.3 V
VCC + 0.3 V
VCC + 0.3 V
VCC + 0.3 V
+200
V
+200
V
+4000 V
+200
V
+150
°C
+150
°C
Notes
1. The waveforms of the applied transients shall be in accordance with “ISO 7637 part 1”, test pulses 1, 2, 3a and 3b
(see Fig.4).
2. Human body model: C = 100 pF and R = 1.5 k.
3. Machine model: C = 200 pF, R = 10 and L = 0.75 µH.
4. In accordance with “IEC 60747-1”. An alternative definition of Tvj is: Tvj = Tamb + P × Rth(vj-a), where Rth(vj-a) is a fixed
value to be used for the calculation of Tvj. The rating for Tvj limits the allowable combinations of power dissipation (P)
and ambient temperature (Tamb).
THERMAL CHARACTERISTICS
According to IEC 60747-1.
SYMBOL
PARAMETER
Rth(vj-a)
Rth(vj-s)
thermal resistance from junction to
ambient in SO8 package
thermal resistance from junction to
substrate of bare die
CONDITIONS
in free air
in free air
VALUE
145
50
UNIT
K/W
K/W
QUALITY SPECIFICATION
Quality specification “SNW-FQ-611 part D” is applicable.
2003 Oct 22
5

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