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AD7545ALPZ-REEL データシートの表示(PDF) - Analog Devices

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AD7545ALPZ-REEL
ADI
Analog Devices ADI
AD7545ALPZ-REEL Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
AD7545A–SPECIFICATIONS (VREF = ؎10 V, VOUT1 = O V, AGND = DGND unless otherwise noted)
Parameter
STATIC PERFORMANCE
Resolution
Relative Accuracy
Differential Nonlinearity
Gain Error
Gain Temperature Coefficient2
Gain/Temperature
DC Supply Rejection2
Gain/VDD
Output Leakage Current at OUT1
DYNAMIC PERFORMANCE
Current Settling Time2
Version
All
K, B, T
L, C, U
All
K, B, T
L, C, U
All
All
All
K, L
B, C
T, U
All
VDD = +5 V
Limits
TA = + 25؇C TMIN–TMAX1
VDD = +15 V
Limits
TA = + 25؇C TMIN–TMAX1
Units
12
± 1/2
± 1/2
±1
±3
±1
±5
±2
0.002
10
10
10
12
± 1/2
± 1/2
±1
±4
±2
±5
±2
0.004
50
50
200
12
± 1/2
± 1/2
±1
±3
±1
±5
±2
0.002
10
10
10
12
± 1/2
± 1/2
±1
±4
±2
±5
±2
0.004
50
50
200
Bits
LSB max
LSB max
LSB max
LSB max
LSB max
ppm/°C max
ppm/°C typ
% per % max
nA max
nA max
nA max
1
1
1
1
µs max
Propagation Delay2 (from Digital
Input Change to 90%
of Final Analog Output)
All
200
Digital-to-Analog Glitch Impulse
All
5
150
5
ns max
nV sec typ
AC Feedthrough2, 4
At OUT1
All
5
5
5
5
mV p-p typ
REFERENCE INPUT
Input Resistance
(Pin 19 to GND)
All
10
10
10
10
kmin
20
20
20
20
kmax
ANALOG OUTPUTS
Output Capacitance2
COUT1
COUT1
DIGITAL INPUTS
Input High Voltage
VIH
Input Low Voltage
VIL
Input Current5
IIN
Input Capacitance2
DB0–DB11, WR, CS
All
70
70
70
70
pF max
150
150
150
150
pF max
All
2.4
2.4
13.5
13.5
V min
All
0.8
0.8
1.5
1.5
V max
All
±1
± 10
±1
± 10
µA max
All
8
8
8
8
pF max
SWITCHING CHARACTERISTICS2
Chip Select to Write Setup Time
K, B, L, C 100
130
75
tCS
T, U
100
170
75
Chip Select to Write Hold Time
tCH
Write Pulse Width
All
0
0
0
K, B, L, C 100
130
75
tWR
Data Setup Time
T, U
100
170
75
tDS
Data Hold Time
All
100
150
60
tDH
All
5
5
5
85
ns min
95
ns min
0
ns min
85
ns min
95
ns min
80
ns min
5
ns min
POWER SUPPLY
VDD
IDD
All
5
5
15
15
V
All
2
2
2
2
mA max
100
100
100
100
µA max
10
10
10
10
µA typ
NOTES
1Temperature range as follows: K, L Versions = 0°C to +70°C; B, C Versions = –25°C to +85°C; T, U Versions = –55°C to +125°C.
2Sample tested to ensure compliance.
3DB0–DB11 = 0 V to VDD or VDD to 0 V.
4Feedthrough can be further reduced by connecting the metal lid on the ceramic package to DGND.
6Logic inputs are MOS gates. Typical input current (+25°C) is less than 1 nA.
Specifications subject to change without notice.
Test Conditions/Comments
Endpoint Measurement
All Grades Guaranteed 12-Bit
Monotonic Over Temperature
Measured Using Internal RFB.
DAC Register Loaded with All 1s.
VDD = ± 5%
DB0–DB11 = 0 V; WR, CS = 0 V
To 1/2 LSB. OUT1 Load = 100 ,
CEXT = 13 pF. DAC Output Measured
from Falling Edge of WR, CS = 0 V.
OUT1 Load = 100 , CEXT = 13 pF3
VREF = AGND. OUT1 Load = 100 ,
Alternately Loaded with All 0s and 1s.
VREF = ± 10 V, 10 kHz Sine Wave
Input Resistance TC = –300 ppm/°C typ
Typical Input Resistance = 15 k
DB0–DB11 = 0 V, WR, CS = 0 V
DB0–DB11 = VDD, WR, CS = 0 V
VIN = 0 or VDD
See Timing Diagram
tCS tWR, TCH 0
± 5% For Specified Performance
All Digital Inputs VIL or VIH
All Digital Inputs 0 V or VDD
All Digital Inputs 0 V or VDD
–2–
REV. C

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