MBM29LV004BC-12 データシートの表示（PDF） - Fujitsu

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MBM29LV004BC-12

4M (512K × 8) BIT

Fujitsu 

MBM29LV004TC-70/-90/-12/MBM29LV004BC-70/-90/-12

s GENERAL DESCRIPTION

The MBM29LV004TC/BC are a 4M-bit, 3.0 V-only Flash memory organized as 512K bytes of 8 bits each. The

MBM29LV004TC/BC are offered in a 40-pin TSOP(I) and 40-pin SON packages. These devices are designed

to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required

for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.

The standard MBM29LV004TC/BC offer access times 70 ns and 120 ns, allowing operation of high-speed

microprocessors without wait states. To eliminate bus contention the devices have separate chip enable (CE),

write enable (WE), and output enable (OE) controls.

The MBM29LV004TC/BC are pin and command set compatible with JEDEC standard E2PROMs. Commands

are written to the command register using standard microprocessor write timings. Register contents serve as

input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally

latch addresses and data needed for the programming and erase operations. Reading data out of the devices

is similar to reading from 5.0 V and 12.0 V Flash or EPROM devices.

The MBM29LV004TC/BC are programmed by executing the program command sequence. This will invoke the

Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths

and verifies proper cell margin. Typically, each sector can be programmed and verified in about 0.5 seconds.

Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase

Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed

before executing the erase operation. During erase, the devices automatically time the erase pulse widths and

verify proper cell margin.

Any individual sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.)

The devices also feature a sector erase architecture. The sector mode allows each sector to be erased and

reprogrammed without affecting other sectors. The MBM29LV004TC/BC are erased when shipped from the

factory.

The devices feature single 3.0 V power supply operation for both read and write functions. Internally generated

and regulated voltages are provided for the program and erase operations. A low VCC detector automatically

inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7,

by the Toggle Bit feature on DQ6, or the RY/BY output pin. Once the end of a program or erase cycle has been

completed, the devices internally reset to the read mode.

Fujitsu’s Flash technology combines years of EPROM and E2PROM experience to produce the highest levels

of quality, reliability, and cost effectiveness. The MBM29LV004TC/BC memories electrically erase the entire chip

or all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes are programmed one byte

at a time using the EPROM programming mechanism of hot electron injection.

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