TLP621 データシートの表示（PDF） - Toshiba

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TLP621

GaAs Ired & Photo−Transistor

Toshiba 

TLP621,TLP621−2,TLP621−4

Maximum Ratings (Ta = 25°C)

Characteritic

Forward current

Forward current derating

Pulse forward current

Power dissipation

Power dissipation derating

Reverse voltage

Junction temperature

Collector-emitter voltage

Emitter-collector valtage

Collector current

Collector power dissipation

(1 circuit)

Symbol

IF

∆IF /°C

IFP

PD

∆PD /°C

VR

Tj

VCEO

VECO

IC

PC

TLP621

60

Rating

TLP621-2

TLP621-4

50

-0.7 (Ta > 39°C) -0.5 (Ta = 25°C)

1 (100µs pulse, 100pps)

100

70

-1.0

-0.7

5

125

55

7

50

Unit

mA

mA /°C

A

mW

mW /°C

V

°C

V

V

mA

150

100

mW

Collector power dissipation derating

(1 circuit, Ta ≥ 25°C)

∆PC /°C

-1.5

-1.0

mW /°C

Junction temperature

Storage temperature range

Operating temperature range

Lead soldering temperature

Total package power dissipation

Total package power dissipation derating

(Ta ≥ 25°C)

Tj

Tstg

Topr

Tsol

PT

∆PT /°C

125

-55~125

-55~100

260 (10 s)

250

150

-2.5

-1.5

°C

°C

°C

°C

mW

mW /°C

Isolation voltage

(Note 1)

BVS

5000 (AC, 1min., R.H.≤ 60%)

Vrms

(Note 1) Device considered a two terminal: LED side pins shorted together, and detector side pins shorted together.

Recommended Operating Conditions

Characteristic

Supply voltage

Forward current

Collector current

Operating temperature

Symbol

VCC

IF

IC

Topr

Min. Typ. Max. Unit

―

5

―

16

―

1

-25

―

24

V

20

mA

10

mA

85

°C

4

2002-09-25

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