TLP632 データシートの表示（PDF） - Toshiba
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TLP632 Datasheet PDF : 8 Pages
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Absolute Maximum Ratings (Ta = 25°C)
TLP631,TLP632
Characteristic
Symbol
Rating
Unit
Forward current
Forward current derating (Ta ≥ 39°C)
Peak forward current (100μs pulse, 100pps)
Reverse voltage
Junction temperature
Collector−emitter voltage
Collector−base voltage (TLP631)
Emitter−collector voltage
Emitter−base voltage (TLP631)
Collector current
Power dissipation
Power dissipation derating (Ta ≥ 25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10s)
Total package power dissipation
Total package power dissipation derating (Ta≥ 25°C)
Isolation voltage (AC, 1 min., R.H. ≤ 60%)
IF
ΔIF / °C
IFP
VR
Tj
VCEO
VCBO
VECO
VEBO
IC
PC
ΔPC / °C
Tj
Tstg
Topr
Tsol
PT
ΔPT / °C
BVS
60
−0.7
1
5
125
55
80
7
7
50
150
−1.5
125
−55~125
−55~100
260
250
−2.5
5000
mA
mA / °C
A
V
°C
V
V
V
V
mA
mW
mW / °C
°C
°C
°C
°C
mW
mW / °C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Recommended Operating Conditions
Characteristic
Symbol
Min. Typ. Max. Unit
Supply voltage
Forward current
Collector current
Operating temperature
VCC
IF
IC
Topr
―
5
―
16
―
1
−25
―
24
V
25
mA
10
mA
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
2007-10-01
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