TN2130K1-G データシートの表示（PDF） - Supertex Inc
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TN2130K1-G Datasheet PDF : 5 Pages
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TN2130
Thermal Characteristics
Package
ID
(continuous)†
(mA)
TO-236AB (SOT-23)
85
Notes:
† ID (continuous) is limited by max rated Tj .
ID
(pulsed)
(mA)
200
Power Dissipation
@TA = 25OC
(W)
0.36
θjc
(OC/W)
200
θjA
(OC/W)
350
IDR†
(mA)
85
IDRM
(mA)
200
Electrical Characteristics (TA = 25OC unless otherwise specified)
Sym Parameter
Min Typ Max Units Conditions
BVDSS Drain-to-source breakdown voltage
300 -
-
V VGS = 0V, ID = 1.0mA
VGS(th) Gate threshold voltage
0.8 -
2.4
V VGS = VDS, ID = 1.0mA
ΔVGS(th) Change in VGS(th) with temperature
-
-
-5.5 mV/OC VGS = VDS, ID = 1.0mA
IGSS Gate body leakage
-
-
100
nA VGS = ± 20V, VDS = 0V
IDSS Zero gate voltage drain current
-
-
10
VGS = 0V, VDS = Max Rating
-
-
100
µA VDS = 0.8Max Rating,
VGS = 0V, TA = 125OC
ID(ON) On-state drain current
250 -
-
mA VGS = 10V, VDS = 25V
RDS(ON) Static drain-to-source on-state resistance
-
-
25
Ω VGS = 4.5V, ID = 120mA
ΔRDS(ON) Change in RDS(ON) with temperature
-
-
1.1 %/OC VGS = 4.5V, ID = 120mA
GFS Forward transductance
-
250
- mmho VDS = 25V, ID = 100mA
CISS
COSS
CRSS
Input capacitance
Common source output capacitance
Reverse transfer capacitance
-
-
50
VGS = 0V,
-
-
15
pF VDS = 25V,
-
- 5.0
f = 1.0MHz
td(ON)
tr
td(OFF)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
-
-
10
-
- 7.0
VDD = 25V,
-
-
12
ns ID = 120mA,
RGEN = 25Ω
-
-
15
VSD Diode forward voltage drop
-
-
1.8
V VGS = 0V, ISD = 120mA
trr
Reverse recovery time
- 400 -
ns VGS = 0V, ISD = 120mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
INPUT
0V 10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
PULSE
GENERATOR
RGEN
INPUT
VDD
RL
OUTPUT
D.U.T.
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
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