DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

TNY253P(2001) データシートの表示(PDF) - Power Integrations, Inc

部品番号
コンポーネント説明
メーカー
TNY253P
(Rev.:2001)
Power-Integrations
Power Integrations, Inc Power-Integrations
TNY253P Datasheet PDF : 20 Pages
First Prev 11 12 13 14 15 16 17 18 19 20
TNY253/254/255
Parameter
Symbol
Conditions
SOURCE = 0 V; TJ = -40 to 125 °C
See Figure 14
(Unless Otherwise Specified)
Min
Typ
CIRCUIT PROTECTION
Current Limit
ILIMIT
Note F
Initial Current
Limit
IINIT
Leading Edge
Blanking Time
t
LEB
Current Limit
Delay
tILD
Thermal Shutdown
Temperature
di/dt = 12.5 mA/µs
TJ = 25 °C
di/dt = 25 mA/µs
TJ = 25 °C
di/dt = 80 mA/µs
T
J
=
25
°C
TNY253
TNY254
TNY255
135 150
230 255
255 280
See Figure 17
T
J
=
25
°C
0.65 x
ILIMIT(MIN)
TJ = 25 °C
TJ = 25 °C
See Note G
TNY253
TNY254
170
240
TNY255 170 215
TNY253
TNY254
200
TNY255
100
125 135
Thermal Shutdown
Hysteresis
70
OUTPUT
ON-State
Resistance
OFF-State
Leakage
Breakdown
Voltage
TNY253/TNY254
TJ = 25 °C
31
RDS(ON)
I = 25 mA
D
TNY255
T
J
=
100
°C
TJ = 25 °C
50
23
I = 33 mA
D
TJ = 100 °C
37
IDSS
VBP = 6.2 V, VEN = 0 V,
VDS = 560 V, TJ = 125 °C
BVDSS
VBP = 6.2 V, VEN = 0 V,
IDS = 100 µA, TJ = 25 °C
700
Rise Time
tR
50
Measured with Figure 10
Schematic.
Fall Time
tF
50
Max
165
280
310
250
150
145
36
60
27
45
50
Units
mA
mA
ns
ns
°C
°C
µA
V
ns
ns
11 C
7/01

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]