TP2510 データシートの表示（PDF） - Supertex Inc
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TP2510 Datasheet PDF : 5 Pages
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Ordering Information
Device
Package Options
TO-243AA (SOT-89)
Die*
TP2510
TP2510N8-G
* MIL visual screening available.
-G indicates package is RoHS compliant (‘Green’)
TP2510ND
BVDSS/BVDGS
(V)
-100
RDS(ON)
(Ω)
3.5
VGS(TH)
(max)
(V)
-2.4
Pin Configuration
DRAIN
TP2510
ID(ON)
(min)
(A)
-1.5
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Value
BVDSS
BVDGS
±20V
-55°C to +150°C
GATE DRAIN SINK
TO-243AA (SOT-89)
(Top View)
Product Marking
Soldering temperature*
300°C
* Distance of 1.6 mm from case for 10 seconds.
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
TP5AW
W = Code for Week Sealed
= “Green” Packaging
TO-243AA (SOT-89) N8
Electrical Characteristics (@25°C unless otherwise specified )
Symbol Parameter
Min Typ Max Units Conditions
BVDSS
VGS(th)
∆VGS(th)
IGSS
IDSS
Drain-to-source breakdown voltage
Gate threshold voltage
Change in VGS(th) with temperature
Gate body leakage
Zero gate voltage drain current
-100
-
-
V
-1.0
-
-2.4
V
-
-
5.0 mV/OC
-
-
-100 nA
-
-10
μA
-
-
-1.0 mA
ID(ON)
ON-state drain current
-0.4 -0.6
-
A
-1.5 -2.5
-
RDS(ON)
Static drain-to-source ON-State
Resistance
5.0
7.0
-
Ω
2.0
3.5
∆RDS(ON)
Change in RDS(ON) with temperature
-
-
1.7 %/OC
GFS
Forward transconductance
300 360
-
mmho
CISS
Input capacitance
-
80
125
COSS
Common source output capacitance
-
40
70
pF
CRSS
Reverse transfer capacitance
-
10
25
td(ON)
Turn-ON delay time
-
-
10
tr
td(OFF)
Rise time
Turn-OFF delay time
-
-
15
ns
-
-
20
tf
Fall time
-
-
15
VSD
Diode forward voltage drop
-
-
-1.8
V
trr
Reverse recovery time
-
300
-
ns
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
VGS = 0V, ID = -2.0mA
VGS = VDS, ID= -1.0mA
VGS = VDS, ID= -1.0mA
VGS = ± 20V, VDS = 0V
VGS = 0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating,
TA = 125°C
VGS = -5.0V, VDS = -25V
VGS = -10V, VDS = -25V
VGS = -5.0V, ID = -250mA
VGS = -10V, ID = -0.75A
VGS = -10V, ID = -0.75A
VDS = -25V, ID = -0.75A
VGS = 0V,
VDS = -25V,
f = 1.0 MHz
VDD = -25V,
ID = -1.0A,
RGEN = 25Ω
VGS = 0V, ISD = -1.0A
VGS = 0V, ISD = -1.0A
2
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