TP2522N8-G データシートの表示（PDF） - Supertex Inc
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TP2522N8-G Datasheet PDF : 5 Pages
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TP2522
Thermal Characteristics
Package
I
I
Power Dissipation
D
D
(continuous)* (pulsed)
@ TA = 25OC
θjc
θja
IDR*
IDRM
(mA)
(A)
(W)
OC/W
OC/W
(mA)
(A)
TO-243AA (SOT-89)
-260
-2.0
1.6
15
78†
-260
-2.0
* ID (continuous) is limited by max rated Tj .
† Mounted on FR5 board, 25mm x 25mm x 1.57mm.
Electrical Characteristics (TA = 25°C unless otherwise specified)
Symbol Parameter
Min Typ Max
Units Conditions
BVDSS
Drain-to-source breakdown voltage
-220
-
-
V
VGS = 0V, ID = -2.0mA
VGS(th)
Gate threshold voltage
-1.0
-
-2.4
V
VGS = VDS, ID= -1.0mA
∆VGS(th) Change in VGS(th) with temperature
-
-
4.5 mV/OC VGS = VDS, ID= -1.0mA
IGSS
Gate body leakage
-
- -100
nA
VGS = ± 20V, VDS = 0V
IDSS
Zero gate voltage drain current
-
-10
μA
VGS = 0V, VDS = Max Rating
-
-
-1.0
mA
VGS = 0V, VDS = 0.8 Max Rating,
TA = 125°C
ID(ON)
ON-state drain current
-0.25 -0.7
-
-0.75 -2.1
-
A
VGS = -4.5V, VDS = -25V
VGS = -10V, VDS = -25V
RDS(ON)
Static drain-to-source ON-State
resistance
10 15
-
8.0 12
Ω
VGS = -4.5V, ID = -100mA
VGS = -10V, ID = -200mA
∆RDS(ON) Change in RDS(ON) with temperature
-
-
1.7
%/OC VGS = -10V, ID = -200mA
GFS
Forward transconductance
100 250
-
mmho VDS = -25V, ID = -200mA
CISS
Input capacitance
-
75 125
VGS = 0V,
COSS
Common source output capacitance
-
20 85
pF
VDS = -25V,
CRSS
Reverse transfer capacitance
-
10 35
f = 1.0 MHz
td(ON)
tr
td(OFF)
tf
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
-
-
10
-
-
15
VDD = -25V,
ns I = -0.75A,
-
-
20
D
RGEN = 25Ω
-
-
15
VSD
Diode forward voltage drop
-
-
-1.8
V
VGS = 0V, ISD = -0.5A
trr
Reverse recovery time
-
300
-
ns
VGS = 0V, ISD = -0.5A
Notes:
(1) All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
(2) All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
INPUT
-10V
10%
0V
OUTPUT
VDD
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
90%
10%
PULSE
GENERATOR
RGEN
INPUT
D.U.T.
Output
RL
VDD
2
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