TPC8119 データシートの表示（PDF） - Toshiba

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TPC8119

Field Effect Transistor Silicon P Channel MOS Type (U-MOSV)

Toshiba 

Thermal Characteristics

Characteristics

Symbol

Thermal resistance, channel to ambient

(t = 10 s)

(Note 2a)

Thermal resistance, channel to ambient

(t = 10 s)

(Note 2b)

Rth (ch-a)

Rth (ch-a)

Max

65.8

125

Unit

°C/W

°C/W

Marking (Note 5)

TPC8119

TPC8119

Part No. (or abbreviation code)

Lot No.

Note 6

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

(a)

(b)

Note 3: VDD = −24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −10 A

Note 4: Repetitive rating: pulse width limited by maximum channel temperature

Note 5: • on the lower left of the marking indicates Pin 1.

* Weekly code: (Three digits)

Week of manufacture

(01 for first week of year, continuing up to 52 or 53)

Year of manufacture

(The last digit of the calendar year)

Note 6: A line under a Lot No. identifies the indication of product Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27

January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

2

2009-09-29

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