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TPD1033 データシートの表示(PDF) - Toshiba

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TPD1033 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Absolute Maximum Ratings (Ta = 25°C)
TPD1033F
Characteristic
Symbol
Rating
Unite
Drain-source voltage
VDS
60
V
Supply voltage
DC
VDD (1)
25
V
Pulse
VDD (2)
60 (Rs = 1,τ= 250 ms)
V
Input voltage
DC
VIN (1)
-0.5 ~ 12
V
Pulse
VIN (2)
VDD (1) + 1.5 (t = 100 ms)
V
Diagnosis output voltage
VDIAG
-0.5 ~ 25
V
Output current
Input current
Diagnosis output current
Power dissipation (Ta = 25°C)
IO
IIN
IDIAG
PD
Internally limited
A
± 10
mA
5
mA
1.4 Note 1
W
2.4 Note 2
Operating temperature
Topr
- 40 ~ 110
°C
Channel temperature
Tch
150
°C
Storage temperature
Tstg
- 55 ~ 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Resistance
Characteristic
Symbol
Test Condition
Thermal resistance
Rth (ch-a)
89.3 (Note 1)
52.1 (Note 2)
Note 1: Mounted on glass epoxy board (25.4 mm × 25.4 mm × 0.8 mm) (DC)
Note 2: Mounted on glass epoxy board (25.4 mm × 25.4 mm × 0.8 mm) (t W 10 s)
Unit
°C/ W
4
2006-10-31

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