TPD1034F データシートの表示（PDF） - Toshiba

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TPD1034F

Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit

Toshiba 

Absolute Maximum Ratings (Ta = 25°C)

TPD1034F

Characteristic

Symbol

Rating

Unite

Drain-source voltage

VDS

60

V

Supply voltage

DC

VDD (1)

25

V

Pulse

VDD (2)

60 (Rs = 1Ω, τ= 250 ms)

V

Input voltage

DC

VIN (1)

−0.5 ~ 12

V

Pulse

VIN (2)

VDD (1) + 1.5 (t = 100 ms)

V

Diagnosis output voltage

VDIAG

−0.5 ~ 25

V

Output current

Input current

Diagnosis output current

Power dissipation (Ta = 25°C)

IO

IIN

IDIAG

PD

Internally limited

A

±10

mA

5

mA

1.4 (Note 1)

W

2.4 (Note 2)

Operating temperature

Topr

−40 ~ 110

°C

Channel temperature

Tch

150

°C

Storage temperature

Tstg

−55 ~ 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Thermal Resistance

Characteristic

Thermal resistance

Symbol

Rth (ch-a)

Test Condition

89.3 (Note 1)

52.1 (Note 2)

Unit

°C / W

Note1: Mounted on a glass epoxy board (25.4 mm × 25.4 mm × 0.8 mm) (DC)

Note2: Mounted on a glass epoxy board (25.4 mm × 25.4 mm × 0.8 mm) (tw ≤ 10 s)

4

2006-10-31

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