DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

TPS820(2002) データシートの表示(PDF) - Toshiba

部品番号
コンポーネント説明
メーカー
TPS820 Datasheet PDF : 5 Pages
1 2 3 4 5
Pin Configuration
TPS820
Current
AMP.
3. VCC
2. OUT
1. GND
Optical and Electrical Characteristics (Ta = 25°C, VCC = 5 V)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Current consumption
Light current (1)
Light current (2)
Output linearity
Saturation output voltage
Dark current
Peak sensitivity wavelength
Rise time
Fall time
ICC
IL(1)
IL(2)
E = 0, IL must be open between
pins
¾ 0.017 1
mA
E = 0.01 mW/cm2
(Note2) 100 250 400 mA
E = 0.1 mW/cm2
(Note2) 1
2.5
4
mA
IL(2)/IL(1)
VOUT(sat)
¾
E = 0.1 mW/cm2
RL = 10 kW
8
10
12
¾
(Note2)
4.1
4.2
¾
V
ID
E=0
¾
¾
0.5
mA
lp
¾
¾
870
¾
nm
tr
VOUT = 2.5 V
¾
250
¾
ms
tf
RL = 10 kW
(Note3) ¾
700
¾
ms
Note 2: The light used is a CIE standard A light source (a standard tungsten bulb with a color temperature of 2856K)
Note 3: Switching time measurement circuit and waveform
Pulse drive
VCC
0.01 mF
TPS820
VOUT
RL
IF
VOUT
tr
90%
10%
tf
Precautions
· When this device is used in combination with an LED lamp, the lamp must be an infrared LED lamp.
· To stabilize the power line, insert a bypass capacitor of up to 0.01 mF between VCC and GND, close to the device.
· When the power is turned on, the output value will fluctuate for 1 ms as the internal circuit stabilizes.
2
2002-01-18

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]