NJVMJD44H11D3T4G(2016) データシートの表示（PDF） - ON Semiconductor
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NJVMJD44H11D3T4G Datasheet PDF : 9 Pages
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MJD44H11 (NPN), MJD45H11 (PNP)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction−to−Case
RqJC
6.25
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
71.4
Lead Temperature for Soldering
TL
260
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(TA = 25_C, common for NPN and PNP, minus sign, “−”, for PNP omitted, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mA, IB = 0)
Collector Cutoff Current
(VCE = Rated VCEO, VBE = 0)
Emitter Cutoff Current
(VEB = 5 Vdc)
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.4 Adc)
Base−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
DC Current Gain
(VCE = 1 Vdc, IC = 2 Adc)
(VCE = 1 Vdc, IC = 4 Adc)
DYNAMIC CHARACTERISTICS
Collector Capacitance
(VCB = 10 Vdc, ftest = 1 Mhz)
MJD44H11
MJD45H11
VCEO(sus)
80
ICES
−
IEBO
−
Vdc
−
−
mA
−
1.0
mA
−
1.0
VCE(sat)
−
VBE(sat)
−
hFE
60
40
Vdc
−
1
Vdc
−
1.5
−
−
−
−
−
Ccb
pF
−
45
−
−
130
−
Gain Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 Mhz)
MJD44H11
MJD45H11
fT
MHz
−
85
−
−
90
−
SWITCHING TIMES
Delay and Rise Times
(IC = 5 Adc, IB1 = 0.5 Adc)
MJD44H11
MJD45H11
td + tr
ns
−
300
−
−
135
−
Storage Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJD44H11
MJD45H11
ts
ns
−
500
−
−
500
−
Fall Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJD44H11
MJD45H11
tf
ns
−
140
−
−
100
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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