TSC2411D データシートの表示（PDF） - TSC Corporation
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TSC2411D Datasheet PDF : 3 Pages
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TSC2411D
General Purpose Dual NPN Transistor
Pin assignment:
1. Emitter 1
2. Base 1
3. Collector 2
6. Collector 1
5. Base 2
4. Emitter 2
BVCEO = 40V
Ic = 600mA
VCE (SAT), = 0.2V(typ.) @Ic / Ib = 500mA / 50mA
Features
Two TSC2411 chips in a STO-363 package
Transistor elements are independent, eliminating
interference
Optimal for low voltage operation
Ordering Information
Part No.
TSC2411DCU6
Packing Package Marking
3kpcs / reel SOT-363 1PR
Structure
Epitaxial planar type.
Mounting possible with SOT-323 automatic mounting
machines.
Complementary to TSA1036DCU6
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Collector Power Dissipation (note)
PD
Operating Junction Temperature
TJ
Operating Junction and Storage Temperature Range
Note: 1. 150mW per element must not be exceeded.
TSTG
Electrical Characteristics (Ta = 25 oC unless otherwise noted)
Limit
60V
40V
6
0.6
200 (total)
+150
- 55 to +150
Parameter
Conditions
Symbol Min
Collector-Base Voltage
IC = 100uA, IE = 0
BVCBO
60
Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0
BVCEO
40
Emitter-Base Breakdown Voltage
IE = 10uA, IC = 0
BVEBO
6
Collector Cutoff Current
VCE = 35V, VEB = 0.4V
ICE
--
Collector-Emitter Saturation Voltage IC / IB = 150mA / 15mA
VCE(SAT)1
--
Collector-Emitter Saturation Voltage IC / IB = 500mA / 50mA
VCE(SAT)2
--
DC Current Transfer Ratio
VCE = 1V, IC = 100uA
hFE 1
20
VCE = 1V, IC = 1mA
hFE 2
40
VCE = 1V, IC = 10mA
hFE 3
80
VCE = 1V, IC = 150mA
hFE 4
82
VCE = 2V, IC = 500mA
hFE 5
40
Transition Frequency
VCE =5V, IC=20mA, f=100MHz
fT
--
Output Capacitance
VCB = 5V, f=1MHz
Cob
--
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Typ
--
--
--
--
--
0.20
--
--
--
--
--
250
6
Unit
V
V
V
A
mW
oC
oC
Max
--
--
--
0.1
0.4
0.75
--
--
--
390
--
--
--
Unit
V
V
V
uA
V
V
MHz
pF
TSC2411D
1-1
2004/06 rev. A
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