BDV65B(2006) データシートの表示（PDF） - ON Semiconductor
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BDV65B Datasheet PDF : 4 Pages
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ON Semiconductort
Complementary Silicon Plastic
Power Darlingtons
. . . for use as output devices in complementary general purpose
amplifier applications.
• High DC Current Gain
HFE = 1000 (min.) @ 5 Adc
• Monolithic Construction with Built−in Base Emitter Shunt Resistors
w These devices are available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continuous
— Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
Value
100
100
5.0
10
20
0.5
125
1.0
– 65 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Symbol
θJC
Max
Unit
1.0
_C/W
NPN
BDV65B
PNP
BDV64B
DARLINGTONS
10 AMPERES
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 −80 −100 −120 VOLTS
125 WATTS
CASE 340D−02
SOT 93, TO−218 TYPE
1.0
0.8
0.6
0.4
0.2
0
0
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 12
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
1
Publication Order Number:
BDV65B/D
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