MJW21191 データシートの表示（PDF） - Motorola => Freescale
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MJW21191 Datasheet PDF : 8 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MJW21192/D
Complementary Silicon Plastic
Power Transistors
Specifically designed for power audio output, or high power drivers in audio
amplifiers.
• DC Current Gain Specified up to 8.0 Amperes at Temperature
• All On Characteristics at Temperature
• High SOA: 20 A, 18 V, 100 ms
• TO–247AE Package
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ — Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
Symbol
RθJC
RθJA
MJW21191
MJW21192
150
150
5.0
8.0
16
2.0
100
0.65
– 65 to + 150
Max
0.65
50
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
_C/W
1000
PNP
NPN
100
NPN
MJW21192
PNP
MJW21191
8.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY
SILICON
150 VOLTS
100 WATTS
CASE 340K–01
TO–247AE
10
1.0
1.0
10
100
1000
VR, REVERSE VOLTAGE (V)
Figure 1. Typical Capacitance @ 25°C
©MMoototorroollaa, IBncip. 1o9la97r Power Transistor Device Data
1
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