MJE243G データシートの表示（PDF） - ON Semiconductor

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MJE243G

Complementary Silicon Power Plastic Transistors

ON Semiconductor 

MJE243 - NPN,

MJE253 - PNP

Complementary Silicon

Power Plastic Transistors

These devices are designed for low power audio amplifier and

low−current, high−speed switching applications.

Features

• High Collector−Emitter Sustaining Voltage −

VCEO(sus) = 100 Vdc (Min)

• High DC Current Gain @ IC = 200 mAdc

hFE = 40 −200

= 40 −120

• Low Collector−Emitter Saturation Voltage −

VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc

• High Current Gain Bandwidth Product −

fT = 40 MHz (Min) @ IC = 100 mAdc

• Annular Construction for Low Leakages

ICBO = 100 nAdc (Max) @ Rated VCB

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol Value

Unit

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current − Continuous

− Peak

VCEO

100

Vdc

VCB

100

Vdc

VEB

7.0

Vdc

IC

4.0

Adc

8.0

Base Current

IB

Total Power Dissipation @ TC = 25_C

PD

Derate above 25_C

10

Adc

15

W

120

mW/_C

Total Power Dissipation @ TA = 25_C

PD

Derate above 25_C

1.5

W

12

mW/_C

Operating and Storage Junction

Temperature Range

TJ, Tstg –65 to +150 _C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

qJC

8.34

_C/W

Thermal Resistance,

Junction−to−Ambient

qJA

83.4

_C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2009

1

April, 2009 − Rev. 13

http://onsemi.com

4.0 AMPERES

POWER TRANSISTORS

COMPLEMENTARY SILICON

100 VOLTS, 15 WATTS

321

TO−225

CASE 77

STYLE 1

MARKING DIAGRAM

YWW

JE2x3G

Y

= Year

WW = Work Week

JE2x3 = Device Code

x = 4 or 5

G

= Pb−Free Package

ORDERING INFORMATION

Device

MJE243

MJE243G

MJE253

Package

TO−225

TO−225

(Pb−Free)

TO−225

Shipping

500 Units/Box

500 Units/Box

500 Units/Box

MJE253G

TO−225

(Pb−Free)

500 Units/Box

Preferred devices are recommended choices for future use

and best overall value.

Publication Order Number:

MJE243/D

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