Philips Semiconductors
Transmit chain and synthesizer with
integrated VCO for DECT
Product specification
UAA2068G
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
Charge-pump current setting resistor input; pin RSET
RSET
VSET
external resistor connected
between pin RSET and ground
regulated voltage at pin RSET
5.6
−
12
−
1.2
−
VCO
fVCO
oscillator frequency
over full temperature
940 −
960
range; note 2
GVCO
GMOD
tuning input VCO gain
modulation input VCO gain
−
45
−
−
1
−
Switch part
FTLOTXoff
isolation between LO and TX
f = 1890 MHz; note 2 −
outputs when TX preamplifier is
off (RX mode)
−50 −
FTLOTXon
isolation due to the switch when f = 1890 MHz; note 2 −
TX preamplifier is on (TX mode)
−40 −
TX preamplifier and LO buffer parts
Po(TX)
TX preamplifier output power
over full temperature
0
range; note 2
fo(TX)
output frequency on TX
preamplifier or LO buffer
1 880
Ro(TX)
TX preamplifier output resistance balanced
−
(real part of the parallel output
impedance)
Co(TX)
TX preamplifier output
balanced
−
capacitance (imaginary part of
the parallel output impedance)
FTVCOTX
VCO frequency feedthrough at
the TX output
referenced to the fo(TX) −
level; note 2
CNR25
CNR4 686
carrier-to-noise ratio at TX output carrier offset ∆f = 25 kHz −
carrier-to-noise ratio at TX output carrier offset
−
∆f = 4686 kHz
∆fo(offset)
total frequency shift due to
200 mV VCC change
disabling the synthesizer
note 2
−
measured 20 µs after
disabling the synthesizer
∆fo(drift)
frequency drift during a slot
note 2
−
Po(LO)
LO preamplifier output power
note 2
−
Ro(LO)
LO preamplifier output
balanced
−
resistance (real part of the
parallel output impedance)
Co(LO)
LO preamplifier output
balanced
−
capacitance (imaginary part of
the parallel output impedance)
3
−
150
0.5
−41
−75
−135
−
1
−14
120
0
7
1 920
−
−
−36
−
−132
±15
± 10
−
−
−
UNIT
kΩ
V
MHz
MHz/V
MHz/V
dB
dB
dBm
MHz
Ω
pF
dBc
dBc/Hz
dBc/Hz
kHz
kHz
dBm
Ω
pF
1998 Nov 19
11