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UBA2024(2010) データシートの表示(PDF) - NXP Semiconductors.

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UBA2024
(Rev.:2010)
NXP
NXP Semiconductors. NXP
UBA2024 Datasheet PDF : 17 Pages
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NXP Semiconductors
UBA2024
Half-bridge power IC for CFL lamps
Table 5. Characteristics …continued
Tj = 25 °C; all voltages are measured with respect to SGND; positive currents flow into the IC.
Symbol Parameter
Conditions
Min
IFS
current on pin FS
VHV = 310 V; VFS = 12.2 V
UBA2024P, UBA2024T
10
UBA2024AP, UBA2024AT
10
VHV = 160 V; VFS = 12.2 V
UBA2024BP, UBA2024BT
10
Internal oscillator
fosc
oscillator frequency
Δfosc/fosc
relative oscillator frequency
variation
kH
high-level trip point factor
Vtrip(osc)high high oscillator trip voltage
kL
low-level trip point factor
Vtrip(osc)low low oscillator trip voltage
Kosc
oscillator constant
Sweep function
VSW = 0 V
VSW = VDD
operating; nominal; ROSC = 100 kΩ;
COSC = 220 pF; VSW = VDD
ROSC = 100 kΩ; COSC = 220 pF;
20 °C Tj +150 °C
Vtrip(osc)high = kH × VDD
Vtrip(osc)low = kL × VDD
ROSC = 100 kΩ; COSC = 220 pF
-
-
40.05
-
0.382
4.58
0.030
0.367
1.065
Ich(sweep)
tsweep
sweep charge current
sweep time
VSW = 0 V
CSW = 33 nF; VDD = 12.2 V
215
0.28
Typ
14
14
14
150
-
41.32
2
0.395
4.94
0.033
0.413
1.1
280
0.35
Max Unit
18 μA
18 μA
18 μA
-
kHz
60 kHz
42.68 kHz
-
%
0.408
5.29 V
0.038
0.483 V
1.35 V
345 nA
0.45 s
11. Electrostatic discharge
Table 6. ElectroStatic Discharge (ESD) overview
Model
Class
ESDH (human body model)
1C
ESDC (charged device model)
C2
ESDM (machine model)
B
JEDEC classification criteria
pass at ESD pulse 1000 V
fail at ESD pulse 2000 V
pass at ESD pulse 200 V
fail at ESD pulse 500 V
pass at 200 V ESD pulse < 400 V
UBA2024
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6.2 — 1 November 2010
© NXP B.V. 2010. All rights reserved.
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