SEMICONDUCTOR
TECHNICAL DATA
DARLINGTON TRANSISTOR
FEATURES
ᴌComplementary to MPSA27.
MAXIMUM RATINGS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
VCBO
VCES
VEBO
IC
PC
Tj
Storage Temperature Range
Tstg
RATING
-60
-60
-10
-500
625
150
-55ᴕ150
UNIT
V
V
V
mA
mW
ᴱ
ᴱ
MPSA77
EPITAXIAL PLANAR PNP TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
ICBO
IEBO
V(BR)CES
V(BR)CBO
hFE(1) *
hFE(2) *
VCE(sat) *
Base-Emitter Voltage
VBE *
* Pulse Test : PWᴪ300ỌS, Duty Cycleᴪ2%.
TEST CONDITION
VCE=-50V, IE=0
VEB=-10V, IB=0
IC=-100ỌA, IB=0
IC=-100ỌA, IE=0
VCE=-5V, IC=-10mA
VCE=-5V, IC=-100mA
IC=-100mA, IB=-0.1mA
VCE=-5V, IC=-100mA
MIN.
-
-
-60
-60
10K
10K
-
-
TYP.
-
-
-
-
-
-
-
-
MAX.
-100
-100
-
-
-
-
-1.5
-2
UNIT
nA
nA
V
V
V
V
2002. 2. 20
Revision No : 1
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