MPSA77 データシートの表示（PDF） - Motorola => Freescale

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MPSA77

Darlington Transistor

Motorola => Freescale 

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Darlington Transistors

PNP Silicon

COLLECTOR 3

BASE

2

Order this document

by MPSA75/D

MPSA75

MPSA77

EMITTER 1

MAXIMUM RATINGS

Rating

Symbol MPSA75 MPSA77 Unit

Collector – Emitter Voltage

Emitter – Base Voltage

Collector Current — Continuous

Total Device Dissipation @ TA = 25°C

Derate above 25°C

VCES

VEBO

IC

PD

–40

–60

–10

–500

625

5.0

Vdc

Vdc

Adc

mW

mW/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient RqJA

200

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

°C/W

Symbol

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage

(IC = –100 µAdc, VBE = 0)

MPSA75

MPSA77

V(BR)CES

Collector – Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

MPSA75

MPSA77

V(BR)CBO

Collector Cutoff Current

(VCB= –30 V, IE = 0)

(VCB = –50 V, IE = 0)

Collector Cutoff Current

(VCE = –30 V, VBE = 0)

(VCE = –50 V, VBE = 0)

Emitter Cutoff Current (VEB = –10 Vdc)

ON CHARACTERISTICS

MPSA75

MPSA77

MPSA75

MPSA77

ICBO

ICES

IEBO

DC Current Gain

(IC = –10 mA, VCE = –5.0 V)

(IC = –100 mA, VCE = –5.0 V)

Collector – Emitter Saturation Voltage (IC = –100 mA, IB = –0.1 mAdc)

Base – Emitter On Voltage (IC = –100 mA, VCE = –5.0 Vdc)

SMALL– SIGNAL CHARACTERISTICS

hFE

VCE(sat)

VBE

Current – Gain — High Frequency (IC = –10 mA, VCE = –5.0 V, f = 100 MHz)

|hfe|

1

23

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

Min

Typ

Max

Unit

–40

—

–60

—

—

Vdc

—

–40

—

–60

—

—

Vdc

—

nAdc

—

—

–100

—

—

–100

nAdc

—

—

–500

—

—

–500

—

—

–100

nAdc

10,000

—

10,000

—

—

—

—

—

—

—

—

–1.5

Vdc

–2.0

Vdc

1.25

2.4

—

—

©MMotootorroollaa,

Small–Signal

Inc. 1996

Transistors,

FETs

and

Diodes

Device

Data

1

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