MMBTA63LT1 データシートの表示（PDF） - ON Semiconductor

部品番号

コンポーネント説明

メーカー

MMBTA63LT1

Darlington Transistors

ON Semiconductor 

MMBTA63LT1, MMBTA64LT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage

(IC = −100 mAdc)

Collector Cutoff Current

(VCB = −30 Vdc)

Emitter Cutoff Current

(VEB = −10 Vdc)

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = −10 mAdc, VCE = −5.0 Vdc)

(IC = −10 mAdc, VCE = −5.0 Vdc)

(IC = −100 mAdc, VCE = −5.0 Vdc)

(IC = −100 mAdc, VCE = −5.0 Vdc)

Collector −Emitter Saturation Voltage

(IC = −100 mAdc, IB = −0.1 mAdc)

Base − Emitter On Voltage

(IC = −100 mAdc, VCE = −5.0 Vdc)

SMALL− SIGNAL CHARACTERISTICS

Current −Gain − Bandwidth Product

(IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz)

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

MMBTA63

MMBTA64

MMBTA63

MMBTA64

Symbol

V(BR)CEO

ICBO

IEBO

hFE

VCE(sat)

VBE(on)

fT

Min

Max

−30

−

−

−100

−

−100

5,000

10,000

10,000

20,000

−

−

−

−

−

−

−1.5

−2.0

125

−

Unit

Vdc

nAdc

nAdc

−

Vdc

Vdc

MHz

http://onsemi.com

2

Share Link: