UMZ1NT1G(2006) データシートの表示（PDF） - ON Semiconductor
部品番号
コンポーネント説明
メーカー
UMZ1NT1G Datasheet PDF : 5 Pages
| |||
UMZ1NT1
Typical Electrical Characteristics: NPN Transistor
280
6.0 mA
240
5.0 mA
3.0 mA
2.0 mA
200
1.0 mA
160
120
0.5 mA
80
IB = 0.2 mA
40
0
TA = 25°C
0
1
2
3
4
5
6
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 7. Collector Saturation Voltage
1000
TA = 100°C
25°C
−25°C
100
VCE = 1.0 V
10
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
1000
1000
TA = 100°C
25°C
−25°C
100
1
IC/IB = 10
TA = 100°C
0.1
25°C
−25°C
VCE = 6.0 V
10
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 9. DC Current Gain
1000
0.01
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 10. VCE(sat) versus IC
1000
10
10,000
COMMON EMITTER
VCE = 6 V
1000
25°C
TA = 100°C
−25°C
100
1
10
TA = 25°C
1
IC/IB = 10
0.1
0.1
1
10
100
1000
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
IC, COLLECTOR CURRENT (mA)
VBE, BASE−EMITTER VOLTAGE (V)
Figure 11. VBE(sat) versus IC
Figure 12. Base−Emitter Voltage
http://onsemi.com
4
Share Link: 