UNR31A4 データシートの表示（PDF） - Panasonic Corporation
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UNR31A4 Datasheet PDF : 3 Pages
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Transistors with built-in Resistor
UNR31A4
Silicon PNP epitaxial planar transistor
For digital circuits
■ Features
• Suitable for high-density mounting and downsizing of the equipment
• Contribute to low power consumption
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−50
V
Collector-emitter voltage (Base open) VCEO
−50
V
Collector current
IC
−80
mA
Total power dissipation
PT
100
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg −55 to +125 °C
0.33+–00..0025
3
0.23+–00..0025
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5°
Unit: mm
0.10+–00..0025
1: Base
2: Emitter
3: Collector
SSSMini3-F1 Package
Marking Symbol: CK
Internal Connection
R1 (10 kΩ)
C
B
R2
(47 kΩ)
E
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VOH
VOL
R1
R1 / R2
fT
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VEB = −6 V, IC = 0
VCE = −10 V, IC = −5 mA
IC = −10 mA, IB = − 0.3 mA
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
−50
−50
80
−4.9
−30%
0.17
VCB = −10 V, IE = 1 mA, f = 200 MHz
− 0.1
− 0.5
− 0.2
− 0.25
− 0.2
10 +30%
0.21 0.25
80
V
V
µA
µA
mA
V
V
V
kΩ
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2002
SJH00075AED
1
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