UPA1818 データシートの表示（PDF） - NEC => Renesas Technology
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UPA1818 Datasheet PDF : 8 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1818
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µ PA1818 is a switching device which can be
driven directly by a 2.5 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power management of notebook
computers and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 15.2 mΩ MAX. (VGS = −4.5 V, ID = −5.0 A)
RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −5.0 A)
RDS(on)3 = 25 mΩ MAX. (VGS = −2.5 V, ID = −5.0 A)
• Built-in G-S protection diode against ESD
ORDERING INFORMATION
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
1.2 MAX.
1.0±0.05
0.25
1
4
3°
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
PART NUMBER
PACKAGE
µPA1818GR-9JG
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
0.65 0.8 MAX.
0.27
+0.03
–0.08
0.10 M
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation Note2
Channel Temperature
Storage Temperature
VDSS
−20
V
VGSS
m 12
V
ID(DC)
m 10
A
ID(pulse)
m 40
A
PT
2.0
W
Tch
150
°C
Tstg −55 to +150 °C
0.1
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G16254EJ1V0DS00 (1st edition)
©
Date Published September 2002 NS CP(K)
Printed in Japan
2002
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