UPA1840 データシートの表示（PDF） - NEC => Renesas Technology

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UPA1840

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

NEC => Renesas Technology 

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µ PA1840

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

The µPA1840 is N-channel MOS FET device that

features a low on-state resistance and excellent

switching characteristics, and designed for high voltage

applications such as DC/DC converter.

ORDERING INFORMATION

PART NUMBER

PACKAGE

µPA1840GR-9JG

Power TSSOP8

FEATURES

• High voltage rating VDSS = 200 V

• Power TSSOP8 package (Single circuit)

• Gate voltage rating ±30 V

• Low on-state resistance

RDS(on) = 0.5 Ω MAX. (VGS = 10 V, ID = 1.5 A)

• Low input capacitance

Ciss = 320 pF TYP. (VDS = 10 V, VGS = 0 V)

• Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

200

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±30

V

Drain Current (DC) (TC = 25°C)

Drain Current (pulse) Note1

Total Power Dissipation Note2

ID(DC)

±2.2

A

ID(pulse)

±8.8

A

PT

2.0

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

–55 to +150 °C

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on ceramic substrate of 5000mm2 x 1.1

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. G14758EJ1V0DS00 (1st edition)

Date Published November 2001 NS CP(K)

©

Printed in Japan

2000

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