UPA1852GR-9JG データシートの表示（PDF） - NEC => Renesas Technology

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UPA1852GR-9JG

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

NEC => Renesas Technology 

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Drain Cut-off Current

Gate Leakage Current

IDSS

VDS = 20 V, VGS = 0 V

IGSS

VGS = ±12 V, VDS = 0 V

Gate Cut-off Voltage

VGS(off) VDS = 10 V, ID = 1 mA

Forward Transfer Admittance

| yfs | VDS = 10 V, ID = 3.0 A

Drain to Source On-state Resistance

RDS(on)1 VGS = 4.5 V, ID = 3.0 A

RDS(on)2 VGS = 4.0 V, ID = 3.0 A

RDS(on)3 VGS = 2.5 V, ID = 3.0 A

Input Capacitance

Ciss

VDS = 10 V

Output Capacitance

Coss

VGS = 0 V

Reverse Transfer Capacitance

Crss

f = 1 MHz

Turn-on Delay Time

td(on)

VDD = 10 V

Rise Time

tr

ID = 1.5 A

Turn-off Delay Time

td(off)

VGS(on) = 4.0 V

Fall Time

tf

RG = 10 Ω

Total Gate Charge

QG

VDD = 10 V

Gate to Source Charge

QGS ID = 6.0 A

Gate to Drain Charge

QGD

VGS = 4.0 V

Diode Forward Voltage

VF(S-D) IF = 6.0 A, VGS = 0 V

Reverse Recovery Time

trr

IF = 6.0 A, VGS = 0 V

Reverse Recovery Charge

Qrr

di/dt = 15 A / µs

µ PA1852

MIN. TYP. MAX. UNIT

10 µA

±10 µA

0.5 0.74 1.5 V

1

10

S

29 40 mΩ

31 45 mΩ

39 60 mΩ

420

pF

265

pF

120

pF

55

ns

160

ns

385

ns

355

ns

6

nC

2

nC

3

nC

0.74

V

20

ns

2

nC

TEST CIRCUIT 1 SWITCHING TIME

D.U.T.

RG

PG.

RG = 10 Ω

VGS

0

τ

τ = 1 µs

Duty Cycle ≤ 1 %

RL

VDD

VGS

VGS

Wave Form

010 %

VGS(on)

ID

90 %

ID

Wave Form

0 10 %

td(on)

ID

tr td(off)

90 %

90 %

10 %

tf

ton

toff

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

IG = 2 mA

RL

PG.

50 Ω

VDD

2

Data Sheet D12803EJ1V0DS00

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