µ PA1858
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
IDSS
IGSS
VGS(off)
VDS = −20 V, VGS = 0 V
VGS = m12 V, VDS = 0 V
VDS = −10 V, ID = −1.0 mA
Forward Transfer Admittance
| yfs | VDS = −10 V, ID = −2.5 A
Drain to Source On-state Resistance
RDS(on)1 VGS = −4.5 V, ID = −2.5 A
RDS(on)2 VGS = −4.0 V, ID = −2.5 A
RDS(on)3 VGS = −2.5 V, ID = −2.5 A
Input Capacitance
Ciss
VDS = −10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1.0 MHz
Turn-on Delay Time
td(on)
VDD = −10 V, ID = −2.5 A
Rise Time
tr
VGS = −4.0 V
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
tf
Total Gate Charge
QG
VDD = −16 V
Gate to Source Charge
QGS
VGS = −4.0 V
Gate to Drain Charge
QGD ID = −5.0 A
Body Diode Forward Voltage
VF(S-D) IF = 5.0 A, VGS = 0 V
Reverse Recovery Time
trr
IF = 5.0 A, VGS = 0 V
Reverse Recovery Charge
Qrr
di/dt = 50 A /µs
MIN. TYP. MAX. UNIT
−1.0 µA
m10 µA
−0.5 −1.0 −1.5 V
5.0 14.2
S
20.3 24.5 mΩ
21.1 25.5 mΩ
28.5 38 mΩ
1300
pF
300
pF
180
pF
16
ns
65
ns
115
ns
125
ns
12
nC
1.5
nC
5.0
nC
0.81
V
90
ns
62
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RG
PG.
VGS(−)
0
τ
τ = 1µs
Duty Cycle ≤ 1%
RL
VDD
VGS(−)
VGS
Wave Form
10%
0
VDS(−)
90%
VDS
VDS
0
Wave Form
td(on)
VGS
90%
90%
10% 10%
tr td(off)
tf
ton
toff
D.U.T.
IG = −2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet G16276EJ1V0DS