DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

UPA1858 データシートの表示(PDF) - NEC => Renesas Technology

部品番号
コンポーネント説明
メーカー
UPA1858
NEC
NEC => Renesas Technology NEC
UPA1858 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
µ PA1858
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
- 100
RDS(on) lim ited
(VGS = 4.5 V) ID(pulse)
- 10
ID (D C )
PW = 1 ms
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.5
PD (FET1):PD (FET2)=1:1
Mounted on ceramic substrate
2
of 5000 mm2 x 1.1 mm
Mounted on FR-4 board
1.5
of 2500 mm2 x 1.6 mm
1
0.5
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
-1
DC
10 ms
- 0.1
- 0.01
Single pulse
Mounted on ceramic substrate
of 5000 mm2 x 1.1 mm
PD (FET1):PD (FET2) = 1:1
- 0.1
-1
- 10
100 ms
- 100
VDS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Single pulse
PD (FET1):PD (FET2) = 1:1
Mounted on FR-4 board of
2500 mm2 x 1.6 mm
125°C/W
Mounted on ceramic substrate of
10
5000 mm2 x 1.1 mm
62.5°C/W
1
0.1
1m
10 m
100 m
1
10
PW - Pulse Width - s
100
1000
Data Sheet G16276EJ1V0DS
3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]