SHF-0298 DC-10 GHz 1 Watt AIGaAs/GaAs HFET
Typical Performance at 25° C (Vds = 9V, Ids = 300mA)
|S11| vs. Frequency
0
-5
dB -10
-15
-20
DC
2
4
6
GHz
8
10
|S12| vs. Frequency
0
|S21| vs. Frequency
28
24
20
16
dB
12
8
4
0
DC
2
4
6
GHz
8
10
|S22| vs. Frequency
0
-10
-20
dB
-30
-40
-5
dB -10
-15
-50
DC
2
4
6
GHz
8
10
-20
DC
2
TOIP vs. Frequency
42
4
6
GHz
8
10
41
40
dBm
39
38
37
DC
2
4
6
8
10
GHz
Typical S-Parameters Vds= 9V, Id= 300mA
Freq G H z
|S 11 |
S11 A ng
|S 2 1 |
S21 Ang
|S 1 2 |
S12 Ang
|S 2 2 |
S22 Ang
.1 0 0
0.98 0
-2 4
9 .2 0
176
0 .0 1
87
0 .2 0
-11 5
.5 0 0
0.89 0
-1 72
8 .7 1
11 7
0 .0 4
35
0 .3 8
-1 36
1 .0 0
0.90 0
-1 28
7 .7 5
107
0 .0 4
29
0 .4 5
-1 50
2 .0 0
0.89 0
-1 53
5 .5 1
92
0 .0 4
21
0 .4 8
-1 56
3 .0 0
0.89 0
-1 58
3 .6 1
78
0 .0 4
20
0 .5 1
-1 48
4 .0 0
0.89 0
-1 63
2 .3 2
71
0 .0 4
22
0 .5 4
-1 50
5 .0 0
0.89 0
-1 68
1 .9 2
59
0 .0 4
23
0 .5 7
-1 52
6 .0 0
0.89 0
-1 70
1 .7 8
53
0 .0 3
31
0 .5 9
-1 50
7 .0 0
0.90 0
-1 72
1 .6 8
48
0 .0 3
51
0 .6 3
-1 50
8 .0 0
0.92 0
-1 74
1 .5 8
37
0 .0 3
56
0 .6 8
-1 54
9 .0 0
0.93 0
-1 76
1 .5 0
39
0 .0 3
53
0 .7 3
-1 58
1 0 .0 0
0.94 0
-1 78
1 .4 2
30
0 .0 3
58
0 .7 5
-1 62
11 .0 0
0.95 0
-1 80
1 .3 4
21
0 .0 3
63
0 .7 7
-1 64
1 2 .0 0
0.96 0
-1 82
1 .2 6
11
0 .0 3
68
0 .7 9
-1 66
(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 30 mils long, connected to the gate and drain pads on the die)
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
3-30
http://www.stanfordmicro.com