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UPD16676P データシートの表示(PDF) - NEC => Renesas Technology

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UPD16676P
NEC
NEC => Renesas Technology NEC
UPD16676P Datasheet PDF : 20 Pages
First Prev 11 12 13 14 15 16 17 18 19 20
µPD16676
Electrical Characteristics (Unless otherwise specified, TA = −40 to +85 °C, VDD = 2.7 to 5.5 V)
Parameter
Symbol
Condition
MIN. TYP.Note MAX.
Unit
High-level input voltage
VIH1
A0, DB0 to DB7, E, R,/W
0.8 VDD
V
High-level input voltage
VIH2
FR, M,/S, /RESET
0.8 VDD
V
Low-level input voltage
VIL1
A0, DB0 to DB7, E, R,/W
0.2 VDD
V
Low-level input voltage
VIL2
FR, M,/S, /RESET
0.2 VDD
V
High-level input current
IIH
A0, E, R,/W, /RESET
1
µA
Low-level input current
IIL
A0, E, R,/W, /RESET
–1
µA
High-level output voltage
VOH1
IOUT = –3 mA, DB0 to DB7,
0.8 VDD
V
VDD = 4.5 to 5.5 V
High-level output voltage
VOH2
IOUT = –2 mA, FR, VDD = 4.5 to 5.5 V 0.8 VDD
V
High-level output voltage
Low-level output voltage
Low-level output voltage
VOH3
VOL1
VOL2
IOUT = –120 µA, OSC2,
VDD = 4.5 to 5.5 V
IOUT = 3 mA, DB0 to DB7,
VDD = 4.5 to 5.5 V
IOUT = 2 mA, FR, VDD = 4.5 to 5.5 V
0.8 VDD
V
0.2 VDD
V
0.2 VDD
V
Low-level output voltage
High-level output voltage
High-level output voltage
VOL3
VOH1
VOH2
IOUT = 120 µA, OSC2,
VDD = 4.5 to 5.5 V
IOUT = –1.5 mA, DB0 to DB7,
0.8 VDD
VDD = 2.7 to 4.5 V
IOUT = –1 mA, FR, VDD = 2.7 to 4.5 V 0.8 VDD
0.2 VDD
V
V
V
High-level output voltage
Low-level output voltage
Low-level output voltage
VOH3
VOL1
VOL2
IOUT = –80 µA, OSC2,
VDD = 2.7 to 4.5 V
IOUT = 1.5 mA, DB0 to DB7,
VDD = 2.7 to 4.5 V
IOUT = 1 mA, FR, VDD = 2.7 to 4.5 V
0.8 VDD
V
0.2 VDD
V
0.2 VDD
V
Low-level output voltage
High-level leak current
VOL3
ILOH
IOUT = 80 µA, OSC2,
VDD = 2.7 to 4.5 V
DB0 to DB7, VIN/OUT = VDD
0.2 VDD
V
3
µA
Low-level leak current
ILOL
DB0 to DB7, VIN/OUT = VSS
–3
µA
Driver output ON resistor
RON
TA = 25 °C, VDD = 5 V, VLC5 = VSS
7.5
k
Driver output ON resistor
RON
TA = 25 °C, VDD = 3.5 V, VLC5 = VSS
50
k
Static current consumption
IDD0
1.0
µA
Dynamic current consumption
IDD1
External clock: 18 kHz
15.0
µA
Self-oscillation: R = 1.3 M
30.0
µA
Dynamic current consumption
IDD3
During access: tCYC = 200 kHz
500
µA
Input capacitance
CIN
TA = 25 °C, f = 1 MHz
8.0
pF
Oscillator frequency
Oscillator frequency
Reset time
fOSC
In self-oscillation, VDD = 5.0 V,
15
18
21
kHz
R = 1.3 MΩ ± 2%
fOSC
In self-oscillation, VDD = 3.0 V,
11
16
21
kHz
R = 1.3 MΩ ± 2%
tR
/RESET↓→Internal reset release
1.0
1000
µs
Remark The TYP. value is a reference value when TA = 25 °C.
Data Sheet S10561EJ5V0DS00
11

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