SNA-286-TR3 データシートの表示（PDF） - Stanford Microdevices

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SNA-286-TR3

DC-6.0 GHz, Cascadable GaAs MMIC Amplifier

Stanford Microdevices 

Absolute Maximum Ratings

Parameter

Absolute

Maximum

Device Current

75mA

Power Dissipation

330mW

RF Input Power

100mW

Junction Temperature

+200C

Operating Temperature

-45C to +85C

Storage Temperature

-65C to +150C

Notes:

1. Operation of this device above any one of

these parameters may cause permanent

damage.

MTTF vs. Temperature @ Id = 50mA

Lead

Te m p e ra tu re

+50C

J u n c tio n

Te m p e ra tu re

+155C

M T T F (h rs)

1000000

+85C

+190C

100000

+ 11 5 C

+220C

10000

Thermal Resistance (Lead-Junction): 531° C/W

SNA-286 DC-6.0 GHz Cascadable MMIC Amplifier

Part Number Ordering Information

Part Number

SNA-286-TR1

Devices Per Reel

1000

SNA-286-TR2

3000

SNA-286-TR3

5000

Reel Size

7"

13"

13"

R ecom m ended B ias R esistor Values

Supply

5V

7 .5 V

9V

12V 15V

Voltage(Vs)

R bias (Ohms) 20

70

100 160 220

20V

320

Typical Biasing Configuration

P in D e s ig n a tio n

1

R F in

2

GND

RF out and

3

B ia s

4

GND

522 Almanor Ave., Sunnyvale, CA 94086

Phone: (800) SMI-MMIC

5-31

http://www.stanfordmicro.com

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